All MOSFET. NTGS3136P Datasheet

 

NTGS3136P MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTGS3136P
   Marking Code: SD*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 274 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TSOP6

 NTGS3136P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTGS3136P Datasheet (PDF)

 ..1. Size:201K  onsemi
ntgs3136p nvgs3136p.pdf

NTGS3136P
NTGS3136P

NTGS3136P, NVGS3136PMOSFET Power, Single,P-Channel, TSOP-6-20 V, -5.8 AFeatureswww.onsemi.com Low RDS(on) in TSOP-6 Package 1.8 V Gate RatingV(BR)DSS RDS(ON) TYP ID MAX Fast Switching25 mW @ -4.5 V -5.1 A NV Prefix for Automotive and Other Applications Requiring Unique-20 V 32 mW @ -2.5 V -4.5 ASite and Control Change Requirements; AEC-Q101 Qualified an

 0.1. Size:113K  onsemi
ntgs3136p-d ntgs3136pt1g.pdf

NTGS3136P
NTGS3136P

NTGS3136PPower MOSFET-20 V, -5.8 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratinghttp://onsemi.com Fast Switching This is a Pb-Free DeviceV(BR)DSS RDS(ON) TYP ID MAXApplications25 mW @ -4.5 V -5.1 A Optimized for Battery and Load Management Applications in-20 V 32 mW @ -2.5 V -4.5 APortable Equipment41 mW @ -1.8 V -

 0.2. Size:1720K  cn vbsemi
ntgs3136pt1g.pdf

NTGS3136P
NTGS3136P

NTGS3136PT1Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm

 7.1. Size:87K  onsemi
ntgs3130n ntgs3130nt1g.pdf

NTGS3136P
NTGS3136P

NTGS3130NPower MOSFET20 V, 5.6 A SingleN-Channel, TSOP-6Features Leading Edge Trench Technology for Low On Resistancehttp://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 PackageV(BR)DSS RDS(on) mAX ID Max This is a Pb-Free Device24 mW @ 4.5 V 5.6 AApplications20 V DC-DC Converters32 mW @ 2.5 V 4.9 A Lithium Ion Ba

Datasheet: NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , IRF540 , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P .

 

 
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