NTHS4166N Todos los transistores

 

NTHS4166N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTHS4166N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: CHIPFET8

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NTHS4166N datasheet

 ..1. Size:84K  onsemi
nths4166n nths4166nt1g.pdf pdf_icon

NTHS4166N

NTHS4166N Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFETt Package Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities 22 mW @ 10 V This is a Pb-Free Device 30 V 8.2 A 27 mW @ 4.5 V Applications

 8.1. Size:193K  onsemi
nths4111pt1g.pdf pdf_icon

NTHS4166N

NTHS4111P Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

 8.2. Size:59K  onsemi
nths4101p-d.pdf pdf_icon

NTHS4166N

NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (

 8.3. Size:118K  onsemi
nths4101p.pdf pdf_icon

NTHS4166N

NTHS4101P MOSFET Power, P-Channel, ChipFET -20 V, 6.7 A Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAX Premium 21 mW @ -4.5 V Low Profile (

Otros transistores... NTHD3101F , NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , IRFP250N , NTHS5404 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C .

History: CS730FA9RD | 2SK1313L | WMM90R500S

 

 

 

 

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