All MOSFET. NTHS4166N Datasheet

 

NTHS4166N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTHS4166N
   Marking Code: 466*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.2 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: CHIPFET8

 NTHS4166N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTHS4166N Datasheet (PDF)

 ..1. Size:84K  onsemi
 nths4166n nths4166nt1g.pdf

NTHS4166N NTHS4166N

NTHS4166NPower MOSFET30 V, 8.2 A, Single N-Channel, ChipFETt PackageFeatureshttp://onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities22 mW @ 10 V This is a Pb-Free Device30 V 8.2 A27 mW @ 4.5 VApplications

 8.1. Size:193K  onsemi
 nths4111pt1g.pdf

NTHS4166N NTHS4166N

NTHS4111PPower MOSFET-30 V, -6.1 A, Single P-Channel, ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

 8.2. Size:59K  onsemi
 nths4101p-d.pdf

NTHS4166N NTHS4166N

NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (

 8.3. Size:118K  onsemi
 nths4101p.pdf

NTHS4166N NTHS4166N

NTHS4101PMOSFET Power,P-Channel, ChipFET-20 V, 6.7 AFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Packagehttp://onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAXPremium21 mW @ -4.5 V Low Profile (

 8.4. Size:122K  onsemi
 nths4101pt1g.pdf

NTHS4166N NTHS4166N

NTHS4101PPower MOSFET-20 V, 6.7 A, P-Channel ChipFETtFeatures Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6http://onsemi.commaking it an Ideal Device for Applications where Board Space is at aPremiumV(BR)DSS RDS(on) TYP ID MAX Low Profile (

Datasheet: NTHD3101F , NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , AON7408 , NTHS5404 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C .

 

 
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