NTHS4166N MOSFET Datasheet: N-Ch, 30V, 4.9A. Full specification with pinout and replacement list

NTHS4166N Specs and Replacement

   Type Designator: NTHS4166N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: CHIPFET8

NTHS4166N substitution

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NTHS4166N datasheet

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NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (... See More ⇒

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NTHS4101P MOSFET Power, P-Channel, ChipFET -20 V, 6.7 A Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAX Premium 21 mW @ -4.5 V Low Profile (... See More ⇒