NTJS4405N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTJS4405N
Código: TS*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.63 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 0.75 nC
Tiempo de subida (tr): 4.7 nS
Conductancia de drenaje-sustrato (Cd): 22.4 pF
Resistencia entre drenaje y fuente RDS(on): 0.35 Ohm
Paquete / Cubierta: SC88 SOT363
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NTJS4405N Datasheet (PDF)
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NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co
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NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7
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