NTJS4405N Datasheet. Specs and Replacement

Type Designator: NTJS4405N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.7 nS

Cossⓘ - Output Capacitance: 22.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SC88 SOT363

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NTJS4405N substitution

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NTJS4405N datasheet

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NTJS4405N

NTJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 249 mW @ 4.5 V 25 V 1.2 A Applications 299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt... See More ⇒

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NTJS4405N

NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co... See More ⇒

 0.1. Size:126K  onsemi
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NTJS4405N

NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N 249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant 25 V 1.2 A 299 mW @ 2.7 ... See More ⇒

 9.1. Size:143K  onsemi
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NTJS4405N

NTJS4151P Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 47 mW @ -4.5 V Gate Diodes for ESD Protection -20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai... See More ⇒

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Detailed specifications: NTJD4105C, NTJD4152P, NTJD4158C, NTJD4401N, NTJD5121N, NTJS3151P, NTJS3157N, NTJS4151P, IRFP260, NTK3043N, NTK3134N, NTK3139P, NTLGD3502N, NTLGF3402P, NTLJD3115P, NTLJD3119C, NTLJD4116N

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