NTJS4405N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTJS4405N
Marking Code: TS*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.75 nC
trⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 22.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SC88 SOT363
NTJS4405N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTJS4405N Datasheet (PDF)
ntjs4405n.pdf
NTJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available249 mW @ 4.5 V25 V 1.2 AApplications299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt
ntjs4405n nvjs4405n.pdf
NTJS4405N, NVJS4405NMOSFET Single,N-Channel, Small Signal,SC-8825 V, 1.2 Ahttp://onsemi.comFeaturesV(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on)249 mW @ 4.5 V Higher Efficiency Extending Battery Life25 V 1.2 A299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co
ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf
NTJS4405N, NVJS4405NSmall Signal MOSFET25 V, 1.2 A, Single, N-Channel, SC-88Features Advance Planar Technology for Fast Switching, Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25 V 1.2 A299 mW @ 2.7
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf
NTJS4151PTrench Power MOSFET-20 V, -4.2 A, Single P-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http://onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-647 mW @ -4.5 V Gate Diodes for ESD Protection-20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai
ntjs4160n-d ntjs4160nt1g.pdf
NTJS4160NPower MOSFET30 V, 3.2 A, Single N-Channel, SC-88Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (
Datasheet: NTJD4105C , NTJD4152P , NTJD4158C , NTJD4401N , NTJD5121N , NTJS3151P , NTJS3157N , NTJS4151P , IRFB3607 , NTK3043N , NTK3134N , NTK3139P , NTLGD3502N , NTLGF3402P , NTLJD3115P , NTLJD3119C , NTLJD4116N .
