NTMFS4833N Todos los transistores

 

NTMFS4833N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMFS4833N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: SO8FL

 Búsqueda de reemplazo de MOSFET NTMFS4833N

 

NTMFS4833N Datasheet (PDF)

 ..1. Size:89K  onsemi
ntmfs4833n.pdf

NTMFS4833N
NTMFS4833N

NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These are Pb-Free Devices*ApplicationsV(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V30 V191 A

 0.1. Size:880K  onsemi
ntmfs4833na.pdf

NTMFS4833N
NTMFS4833N

 0.2. Size:139K  onsemi
ntmfs4833nt1g.pdf

NTMFS4833N
NTMFS4833N

NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D2.0 mW @ 10 V30 V191 A CPU Po

 0.3. Size:139K  onsemi
ntmfs4833ns.pdf

NTMFS4833N
NTMFS4833N

NTMFS4833NSSENSEFET) Power MOSFET30 V, 156 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.2 m

 0.4. Size:139K  onsemi
ntmfs4833nst1g.pdf

NTMFS4833N
NTMFS4833N

NTMFS4833NSSENSEFET) Power MOSFET30 V, 156 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.2 m

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


NTMFS4833N
  NTMFS4833N
  NTMFS4833N
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top