NTMFS4833N Datasheet and Replacement
Type Designator: NTMFS4833N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: SO8FL
NTMFS4833N substitution
NTMFS4833N Datasheet (PDF)
ntmfs4833n.pdf

NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These are Pb-Free Devices*ApplicationsV(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V30 V191 A
ntmfs4833nt1g.pdf

NTMFS4833NPower MOSFET30 V, 191 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D2.0 mW @ 10 V30 V191 A CPU Po
ntmfs4833ns.pdf

NTMFS4833NSSENSEFET) Power MOSFET30 V, 156 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.2 m
Datasheet: NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N , NTMFS4821N , NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , IRF830 , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N .
History: 9N90C
Keywords - NTMFS4833N MOSFET datasheet
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History: 9N90C



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