NTMFS4841N Todos los transistores

 

NTMFS4841N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMFS4841N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.17 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66.5 nS

Cossⓘ - Capacitancia de salida: 348 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: SO8FL

 Búsqueda de reemplazo de NTMFS4841N MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTMFS4841N datasheet

 ..1. Size:145K  onsemi
ntmfs4841n.pdf pdf_icon

NTMFS4841N

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4

 0.1. Size:138K  onsemi
ntmfs4841nh.pdf pdf_icon

NTMFS4841N

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

 0.2. Size:108K  onsemi
ntmfs4841nht1g.pdf pdf_icon

NTMFS4841N

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A

 0.3. Size:115K  onsemi
ntmfs4841nt1g.pdf pdf_icon

NTMFS4841N

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.

Otros transistores... NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , IRFB31N20D , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF .

History: IXFE44N50Q | SWP70N10V | SE472

 

 

 

 

↑ Back to Top
.