All MOSFET. NTMFS4841N Datasheet

 

NTMFS4841N Datasheet and Replacement


   Type Designator: NTMFS4841N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66.5 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO8FL
 

 NTMFS4841N substitution

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NTMFS4841N Datasheet (PDF)

 ..1. Size:145K  onsemi
 ntmfs4841n.pdf pdf_icon

NTMFS4841N

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4

 0.1. Size:138K  onsemi
 ntmfs4841nh.pdf pdf_icon

NTMFS4841N

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 0.2. Size:108K  onsemi
 ntmfs4841nht1g.pdf pdf_icon

NTMFS4841N

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A

 0.3. Size:115K  onsemi
 ntmfs4841nt1g.pdf pdf_icon

NTMFS4841N

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.

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Datasheet: NTMFS4823N , NTMFS4825NFE , NTMFS4826NE , NTMFS4833N , NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , IRFB31N20D , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF .

History: NTMFS4836N

Keywords - NTMFS4841N MOSFET datasheet

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