NTMFS4841N PDF and Equivalents Search

 

NTMFS4841N Specs and Replacement

Type Designator: NTMFS4841N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66.5 nS

Cossⓘ - Output Capacitance: 348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: SO8FL

NTMFS4841N substitution

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NTMFS4841N datasheet

 ..1. Size:145K  onsemi
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NTMFS4841N

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4... See More ⇒

 0.1. Size:138K  onsemi
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NTMFS4841N

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A... See More ⇒

 0.2. Size:108K  onsemi
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NTMFS4841N

NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 59 A ... See More ⇒

 0.3. Size:115K  onsemi
ntmfs4841nt1g.pdf pdf_icon

NTMFS4841N

NTMFS4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 7.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 57 A 11.4 mW @ 4.... See More ⇒

Detailed specifications: NTMFS4823N, NTMFS4825NFE, NTMFS4826NE, NTMFS4833N, NTMFS4833NS, NTMFS4834N, NTMFS4835N, NTMFS4836N, IRFB31N20D, S60N12RN, NTMFS4846N, NTMFS4847N, NTMFS4851N, NTMFS4852N, NTMFS4854NS, S60N12RP, NTMFS4898NF

Keywords - NTMFS4841N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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