NTMFS4854NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4854NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 24.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 1130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de NTMFS4854NS MOSFET
NTMFS4854NS Datasheet (PDF)
ntmfs4854ns.pdf

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
ntmfs4854nst1g.pdf

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
ntmfs4852nt1g.pdf

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
ntmfs4852n.pdf

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
Otros transistores... NTMFS4835N , NTMFS4836N , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , P0903BDG , S60N12RP , NTMFS4898NF , 2SK2828 , NTMFS4921N , NTMFS4923NE , NTMFS4925N , NTMFS4926N , NTMFS4927N .
History: SML601R6KN | PHP6N10E | NVB6410AN | BF556A | NDT70N03 | SSS10N60 | S60N12RP
History: SML601R6KN | PHP6N10E | NVB6410AN | BF556A | NDT70N03 | SSS10N60 | S60N12RP



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