NTMFS4854NS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4854NS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.31 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 54 ns
Cossⓘ - Выходная емкость: 1130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: SO8FL
- подбор MOSFET транзистора по параметрам
NTMFS4854NS Datasheet (PDF)
ntmfs4854ns.pdf

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
ntmfs4854nst1g.pdf

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
ntmfs4852nt1g.pdf

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
ntmfs4852n.pdf

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
Другие MOSFET... NTMFS4835N , NTMFS4836N , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , NTMFS4851N , NTMFS4852N , IRFZ48N , S60N12RP , NTMFS4898NF , 2SK2828 , NTMFS4921N , NTMFS4923NE , NTMFS4925N , NTMFS4926N , NTMFS4927N .
History: IRHLF770Z4 | RU7550S | AUIRFZ34N | 2N6760JANTXV | CEN2307A | IRLML9301TRPBF | STP20NM60FP
History: IRHLF770Z4 | RU7550S | AUIRFZ34N | 2N6760JANTXV | CEN2307A | IRLML9301TRPBF | STP20NM60FP



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
irfb4115 | 21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet