All MOSFET. NTMFS4854NS Datasheet

 

NTMFS4854NS MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTMFS4854NS
   Marking Code: 4854NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 24.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: SO8FL

 NTMFS4854NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTMFS4854NS Datasheet (PDF)

 ..1. Size:120K  onsemi
 ntmfs4854ns.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

 0.1. Size:110K  onsemi
 ntmfs4854nst1g.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5

 6.1. Size:107K  onsemi
 ntmfs4852nt1g.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

 6.2. Size:137K  onsemi
 ntmfs4852n.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po

 6.3. Size:107K  onsemi
 ntmfs4851nt1g.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Note

 6.4. Size:137K  onsemi
 ntmfs4851n.pdf

NTMFS4854NS NTMFS4854NS

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Not

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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