NTR2101P Todos los transistores

 

NTR2101P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTR2101P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 8 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.75 nS

Cossⓘ - Capacitancia de salida: 289 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SOT23

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NTR2101P datasheet

 ..1. Size:96K  onsemi
 ntr2101p.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications 79 mW @ -1.8 V High Side

 ..2. Size:101K  tysemi
 ntr2101p.pdf pdf_icon

NTR2101P

Product specification NTR2101P Small Signal MOSFET V(BR)DSS RDS(on) Typ ID Max 39 mW @ -4.5 V -8.0 V, -3.7 A, Single P-Channel, SOT-23 -8.0 V 52 mW @ -2.5 V -3.7 A Features 79 mW @ -1.8 V Leading Trench Technology for Low RDS(on) P-Channel -1.8 V Rated for Low Voltage Gate Drive D SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free Device Applic

 0.1. Size:113K  onsemi
 ntr2101p-d.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch

 0.2. Size:109K  onsemi
 ntr2101pt1g.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch

MOSTRAR MÁS

Otros transistores... NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , NTR1P02 , NTR1P02LT1 , K3569 , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , NTR4502P , NTR4503N , NTS2101P .

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History: BUK6211-75C

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