NTR2101P
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTR2101P
Marking Code: TR7*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.96
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 15.75
nS
Cossⓘ -
Output Capacitance: 289
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052
Ohm
Package:
SOT23
NTR2101P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTR2101P
Datasheet (PDF)
..1. Size:96K onsemi
ntr2101p.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)www.onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications79 mW @ -1.8 V High Side
..2. Size:101K tysemi
ntr2101p.pdf
Product specificationNTR2101PSmall Signal MOSFETV(BR)DSS RDS(on) Typ ID Max39 mW @ -4.5 V-8.0 V, -3.7 A, Single P-Channel, SOT-23-8.0 V52 mW @ -2.5 V -3.7 AFeatures79 mW @ -1.8 V Leading Trench Technology for Low RDS(on)P-Channel -1.8 V Rated for Low Voltage Gate DriveD SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free DeviceApplic
0.1. Size:113K onsemi
ntr2101p-d.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications High Side Load Switch
0.2. Size:109K onsemi
ntr2101pt1g.pdf
NTR2101PSmall Signal MOSFET-8.0 V, -3.7 A, Single P-Channel, SOT-23Features Leading Trench Technology for Low RDS(on)http://onsemi.com -1.8 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm)39 mW @ -4.5 V This is a Pb-Free Device-8.0 V52 mW @ -2.5 V -3.7 AApplications High Side Load Switch
0.3. Size:906K cn vbsemi
ntr2101pt1g.pdf
NTR2101PT1Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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