NTR2101P Datasheet. Specs and Replacement
Type Designator: NTR2101P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.75 nS
Cossⓘ - Output Capacitance: 289 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOT23
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NTR2101P substitution
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NTR2101P datasheet
ntr2101p.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications 79 mW @ -1.8 V High Side... See More ⇒
ntr2101p.pdf
Product specification NTR2101P Small Signal MOSFET V(BR)DSS RDS(on) Typ ID Max 39 mW @ -4.5 V -8.0 V, -3.7 A, Single P-Channel, SOT-23 -8.0 V 52 mW @ -2.5 V -3.7 A Features 79 mW @ -1.8 V Leading Trench Technology for Low RDS(on) P-Channel -1.8 V Rated for Low Voltage Gate Drive D SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free Device Applic... See More ⇒
ntr2101p-d.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒
ntr2101pt1g.pdf
NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒
Detailed specifications: NTP5864N, NTP6410AN, NTP6411AN, NTP6412AN, NTP6413AN, NTR0202PL, NTR1P02, NTR1P02LT1, 2SK3568, NTR4003N, IPS65R650CE, NTR4170N, NTR4171P, NTR4501N, NTR4502P, NTR4503N, NTS2101P
Keywords - NTR2101P MOSFET specs
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History: 2SK3816
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