NTR2101P PDF and Equivalents Search

 

NTR2101P Specs and Replacement


   Type Designator: NTR2101P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15.75 nS
   Cossⓘ - Output Capacitance: 289 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT23
 

 NTR2101P substitution

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NTR2101P datasheet

 ..1. Size:96K  onsemi
 ntr2101p.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) www.onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications 79 mW @ -1.8 V High Side... See More ⇒

 ..2. Size:101K  tysemi
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NTR2101P

Product specification NTR2101P Small Signal MOSFET V(BR)DSS RDS(on) Typ ID Max 39 mW @ -4.5 V -8.0 V, -3.7 A, Single P-Channel, SOT-23 -8.0 V 52 mW @ -2.5 V -3.7 A Features 79 mW @ -1.8 V Leading Trench Technology for Low RDS(on) P-Channel -1.8 V Rated for Low Voltage Gate Drive D SOT-23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb-Free Device Applic... See More ⇒

 0.1. Size:113K  onsemi
 ntr2101p-d.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒

 0.2. Size:109K  onsemi
 ntr2101pt1g.pdf pdf_icon

NTR2101P

NTR2101P Small Signal MOSFET -8.0 V, -3.7 A, Single P-Channel, SOT-23 Features Leading Trench Technology for Low RDS(on) http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SOT-23 Surface Mount for Small Footprint (3 x 3 mm) 39 mW @ -4.5 V This is a Pb-Free Device -8.0 V 52 mW @ -2.5 V -3.7 A Applications High Side Load Switch ... See More ⇒

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Detailed specifications: NTP5864N , NTP6410AN , NTP6411AN , NTP6412AN , NTP6413AN , NTR0202PL , NTR1P02 , NTR1P02LT1 , K3569 , NTR4003N , IPS65R650CE , NTR4170N , NTR4171P , NTR4501N , NTR4502P , NTR4503N , NTS2101P .

Keywords - NTR2101P MOSFET specs

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