NTTFS4929N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTTFS4929N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.11 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 337 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: WDFN8
Búsqueda de reemplazo de NTTFS4929N MOSFET
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NTTFS4929N datasheet
nttfs4929n.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
nttfs4929ntag.pdf
NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.
nttfs4928ntag.pdf
NTTFS4928N MOSFET Power, Single, N-Channel, m8FL 30 V, 37 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses 9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 37 A Compliant 13.5 mW @ 4.5 V
nttfs4928n.pdf
NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @
Otros transistores... NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , NTTFS4823N , NTTFS4824N , NTTFS4928N , IRFP450 , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL .
History: APM4835 | SGB100N042
History: APM4835 | SGB100N042
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