NTTFS4929N PDF and Equivalents Search

 

NTTFS4929N Specs and Replacement

Type Designator: NTTFS4929N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 337 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: WDFN8

NTTFS4929N substitution

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NTTFS4929N datasheet

 ..1. Size:127K  onsemi
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NTTFS4929N

NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.... See More ⇒

 0.1. Size:116K  onsemi
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NTTFS4929N

NTTFS4929N Power MOSFET 30 V, 34 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 11 mW @ 10 V Applications 30 V 34 A 17 mW @ 4.... See More ⇒

 6.1. Size:128K  1
nttfs4928ntag.pdf pdf_icon

NTTFS4929N

NTTFS4928N MOSFET Power, Single, N-Channel, m8FL 30 V, 37 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses 9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 30 V 37 A Compliant 13.5 mW @ 4.5 V ... See More ⇒

 6.2. Size:122K  onsemi
nttfs4928n.pdf pdf_icon

NTTFS4929N

NTTFS4928N Power MOSFET 30 V, 37 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 9.0 mW @ 10 V Applications 30 V 37 A 13.5 mW @... See More ⇒

Detailed specifications: NTS4101P, NTS4173P, NTS4409NT1G, NTTD4401F, NTTFS4821N, NTTFS4823N, NTTFS4824N, NTTFS4928N, IRFP450, NTTFS4930N, NTTFS4932N, NTTFS4937N, NTTFS4939N, NTTFS4941N, NTTFS5116PL, NTTFS5811NL, NTTFS5820NL

Keywords - NTTFS4929N MOSFET specs

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