All MOSFET. NTTFS4929N Datasheet

 

NTTFS4929N Datasheet and Replacement


   Type Designator: NTTFS4929N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: WDFN8
 

 NTTFS4929N substitution

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NTTFS4929N Datasheet (PDF)

 ..1. Size:127K  onsemi
 nttfs4929n.pdf pdf_icon

NTTFS4929N

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.

 0.1. Size:116K  onsemi
 nttfs4929ntag.pdf pdf_icon

NTTFS4929N

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.

 6.1. Size:128K  1
 nttfs4928ntag.pdf pdf_icon

NTTFS4929N

NTTFS4928NMOSFET Power, Single,N-Channel, m8FL30 V, 37 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS30 V 37 ACompliant13.5 mW @ 4.5 V

 6.2. Size:122K  onsemi
 nttfs4928n.pdf pdf_icon

NTTFS4929N

NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - NTTFS4929N MOSFET datasheet

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