NTTFS4929N - Даташиты. Аналоги. Основные параметры
Наименование производителя: NTTFS4929N
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.11 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 337 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NTTFS4929N
NTTFS4929N Datasheet (PDF)
nttfs4929n.pdf

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
nttfs4929ntag.pdf

NTTFS4929NPower MOSFET30 V, 34 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant11 mW @ 10 VApplications30 V 34 A17 mW @ 4.
nttfs4928ntag.pdf

NTTFS4928NMOSFET Power, Single,N-Channel, m8FL30 V, 37 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses9.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS30 V 37 ACompliant13.5 mW @ 4.5 V
nttfs4928n.pdf

NTTFS4928NPower MOSFET30 V, 37 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant9.0 mW @ 10 VApplications30 V 37 A13.5 mW @
Другие MOSFET... NTS4101P , NTS4173P , NTS4409NT1G , NTTD4401F , NTTFS4821N , NTTFS4823N , NTTFS4824N , NTTFS4928N , IRF1407 , NTTFS4930N , NTTFS4932N , NTTFS4937N , NTTFS4939N , NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL .
History: PHW7N60E | VN0104ND | NTTD4401F | SML6040AN | NTP6413AN | FDS8870
History: PHW7N60E | VN0104ND | NTTD4401F | SML6040AN | NTP6413AN | FDS8870



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