NVD5862N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5862N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 115 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 98 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NVD5862N
NVD5862N Datasheet (PDF)
nvd5862n.pdf
NVD5862NPower MOSFET60 V, 5.7 mW, 98 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted
nvd5863nl.pdf
NVD5863NLPower MOSFET60 V, 7.1 mW, 82 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant7.1 mW @ 10 V60 V 82 AMAXIMUM RATINGS (TJ = 25C unless otherwise not
nvd5865nl.pdf
NVD5865NLPower MOSFET60 V, 46 A, 16 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 QualifiedV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS16 mW @ 10 VCompliant60 V 46 A19 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless oth
nvd5867nl.pdf
NVD5867NLPower MOSFET60 V, 22 A, 39 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS39 mW @ 10 VCompliant60 V 22 A50 mW @ 4.5 VMAXIMUM RATINGS (TJ =
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918