NVD5862N Todos los transistores

 

NVD5862N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVD5862N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 98 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: DPAK

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NVD5862N datasheet

 ..1. Size:112K  onsemi
 nvd5862n.pdf pdf_icon

NVD5862N

NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 60 V 5.7 mW @ 10 V 98 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted

 8.1. Size:135K  onsemi
 nvd5863nl.pdf pdf_icon

NVD5862N

NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 7.1 mW @ 10 V 60 V 82 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not

 8.2. Size:74K  onsemi
 nvd5865nl.pdf pdf_icon

NVD5862N

NVD5865NL Power MOSFET 60 V, 46 A, 16 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 16 mW @ 10 V Compliant 60 V 46 A 19 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless oth

 8.3. Size:136K  onsemi
 nvd5867nl.pdf pdf_icon

NVD5862N

NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 39 mW @ 10 V Compliant 60 V 22 A 50 mW @ 4.5 V MAXIMUM RATINGS (TJ =

MOSTRAR MÁS

Otros transistores... NTZD3155C , NTZD5110N , NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , AO3400A , NVD5863NL , NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N .

 

 

 


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