All MOSFET. NVD5862N Datasheet

 

NVD5862N Datasheet and Replacement


   Type Designator: NVD5862N
   Marking Code: V5862
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 82 nC
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DPAK
 

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NVD5862N Datasheet (PDF)

 ..1. Size:112K  onsemi
 nvd5862n.pdf pdf_icon

NVD5862N

NVD5862NPower MOSFET60 V, 5.7 mW, 98 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted

 8.1. Size:135K  onsemi
 nvd5863nl.pdf pdf_icon

NVD5862N

NVD5863NLPower MOSFET60 V, 7.1 mW, 82 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant7.1 mW @ 10 V60 V 82 AMAXIMUM RATINGS (TJ = 25C unless otherwise not

 8.2. Size:74K  onsemi
 nvd5865nl.pdf pdf_icon

NVD5862N

NVD5865NLPower MOSFET60 V, 46 A, 16 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 QualifiedV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS16 mW @ 10 VCompliant60 V 46 A19 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless oth

 8.3. Size:136K  onsemi
 nvd5867nl.pdf pdf_icon

NVD5862N

NVD5867NLPower MOSFET60 V, 22 A, 39 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS39 mW @ 10 VCompliant60 V 22 A50 mW @ 4.5 VMAXIMUM RATINGS (TJ =

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Datasheet: NTZD3155C , NTZD5110N , NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , RU6888R , NVD5863NL , NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N .

History: FRX130H1

Keywords - NVD5862N MOSFET datasheet

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