NVD5865NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5865NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.4 nS
Cossⓘ - Capacitancia de salida: 137 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de NVD5865NL MOSFET
- Selecciónⓘ de transistores por parámetros
NVD5865NL datasheet
nvd5865nl.pdf
NVD5865NL Power MOSFET 60 V, 46 A, 16 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 16 mW @ 10 V Compliant 60 V 46 A 19 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless oth
nvd5863nl.pdf
NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 7.1 mW @ 10 V 60 V 82 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not
nvd5862n.pdf
NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 60 V 5.7 mW @ 10 V 98 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted
nvd5867nl.pdf
NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 39 mW @ 10 V Compliant 60 V 22 A 50 mW @ 4.5 V MAXIMUM RATINGS (TJ =
Otros transistores... NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , STP65NF06 , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N , NVTFS5116PL , NVTFS5811NL .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079