NVD5865NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5865NL
Código: V5865L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 71 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 46 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 29 nC
Tiempo de subida (tr): 12.4 nS
Conductancia de drenaje-sustrato (Cd): 137 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NVD5865NL
NVD5865NL Datasheet (PDF)
nvd5865nl.pdf
NVD5865NLPower MOSFET60 V, 46 A, 16 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 QualifiedV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS16 mW @ 10 VCompliant60 V 46 A19 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless oth
nvd5863nl.pdf
NVD5863NLPower MOSFET60 V, 7.1 mW, 82 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant7.1 mW @ 10 V60 V 82 AMAXIMUM RATINGS (TJ = 25C unless otherwise not
nvd5862n.pdf
NVD5862NPower MOSFET60 V, 5.7 mW, 98 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted
nvd5867nl.pdf
NVD5867NLPower MOSFET60 V, 22 A, 39 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS39 mW @ 10 VCompliant60 V 22 A50 mW @ 4.5 VMAXIMUM RATINGS (TJ =
Otros transistores... NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , NCEP85T25VD , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , NVTFS4823N , NVTFS4824N , NVTFS5116PL , NVTFS5811NL .
