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NVD5865NL Specs and Replacement

Type Designator: NVD5865NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.4 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DPAK

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NVD5865NL datasheet

 ..1. Size:74K  onsemi
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NVD5865NL

NVD5865NL Power MOSFET 60 V, 46 A, 16 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 16 mW @ 10 V Compliant 60 V 46 A 19 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless oth... See More ⇒

 8.1. Size:135K  onsemi
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NVD5865NL

NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 7.1 mW @ 10 V 60 V 82 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒

 8.2. Size:112K  onsemi
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NVD5865NL

NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 60 V 5.7 mW @ 10 V 98 A MAXIMUM RATINGS (TJ = 25 C unless otherwise noted... See More ⇒

 8.3. Size:136K  onsemi
nvd5867nl.pdf pdf_icon

NVD5865NL

NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability www.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 39 mW @ 10 V Compliant 60 V 22 A 50 mW @ 4.5 V MAXIMUM RATINGS (TJ =... See More ⇒

Detailed specifications: NTZS3151P, FDB075N15AF085, NUS3116MT, NUS5530MN, NUS5531MT, NVD5803N, NVD5862N, NVD5863NL, STP65NF06, NVD5867NL, NVD5890N, NVMFD5877NL, NVMFS4841N, NVTFS4823N, NVTFS4824N, NVTFS5116PL, NVTFS5811NL

Keywords - NVD5865NL MOSFET specs

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