NVMFS4841N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS4841N
Código: V4841_4841WF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.7 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 16 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 25.4 nC
Tiempo de subida (tr): 66.5 nS
Conductancia de drenaje-sustrato (Cd): 348 pF
Resistencia entre drenaje y fuente RDS(on): 0.007 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de MOSFET NVMFS4841N
NVMFS4841N Datasheet (PDF)
nvmfs4841n.pdf
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nvmfs4841n-d.pdf
NVMFS4841NPower MOSFET30V, 7 mW, 89A, Single N-Channel SO8FLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAX7.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
nvmfs4c302n.pdf
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nvmfs4c05n.pdf
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nvmfs4c03n.pdf
NVMFS4C03NPower MOSFET30 V, 2.1 mW, 143 A, Single N-ChannelLogic Level, SO-8FLFeatures http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses2.1 mW @ 10 V30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A2.8 mW @ 4.5
nvmfs4c01n.pdf
NVMFS4C01NPower MOSFET30 V, 0.9 mW, 319 A, Single N-Channel,Logic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical0.9 mW @ 10 VInspection30 V319 A
nvmfs4c310n.pdf
NVMFS4C310NPower MOSFET30 V, 51 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.0 mW @
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