NVMFS4841N
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVMFS4841N
Marking Code: V4841_4841WF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 25.4
nC
trⓘ - Rise Time: 66.5
nS
Cossⓘ -
Output Capacitance: 348
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
SO8FL
NVMFS4841N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVMFS4841N
Datasheet (PDF)
..1. Size:123K onsemi
nvmfs4841n.pdf 
NVMFS4841NPower MOSFET30V, 7 mW, 89A, Single N-Channel SO8FLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are
0.1. Size:113K onsemi
nvmfs4841n-d.pdf
NVMFS4841NPower MOSFET30V, 7 mW, 89A, Single N-Channel SO8FLFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAX7.0 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
8.1. Size:119K onsemi
nvmfs4c302n.pdf
NVMFS4C302NPower MOSFET30 V, 1.15 mW, 241 A, Single N-ChannelLogic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical1.15 mW @ 10 VInspection30 V241 A
8.2. Size:70K onsemi
nvmfs4c05n.pdf
NVMFS4C05NPower MOSFET30 V, 116 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable3.4 mW
8.3. Size:74K onsemi
nvmfs4c03n.pdf
NVMFS4C03NPower MOSFET30 V, 2.1 mW, 143 A, Single N-ChannelLogic Level, SO-8FLFeatures http://onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses2.1 mW @ 10 V30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A2.8 mW @ 4.5
8.4. Size:73K onsemi
nvmfs4c01n.pdf
NVMFS4C01NPower MOSFET30 V, 0.9 mW, 319 A, Single N-Channel,Logic Level, SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical0.9 mW @ 10 VInspection30 V319 A
8.5. Size:109K onsemi
nvmfs4c310n.pdf
NVMFS4C310NPower MOSFET30 V, 51 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseswww.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced OpticalInspectionV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable6.0 mW @
Datasheet: NUS5531MT
, NVD5803N
, NVD5862N
, NVD5863NL
, NVD5865NL
, NVD5867NL
, NVD5890N
, NVMFD5877NL
, STP65NF06
, NVTFS4823N
, NVTFS4824N
, NVTFS5116PL
, NVTFS5811NL
, NVTFS5820NL
, NVTFS5826NL
, SCH1330
, SCH1331
.
