NVMFS4841N - описание и поиск аналогов

NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N-Channel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS4841NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are

NVMFS4841N Power MOSFET 30V, 7 mW, 89A, Single N-Channel SO8FL Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX 7.0 mW @ 10 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)

NVMFS4C302N Power MOSFET 30 V, 1.15 mW, 241 A, Single N-Channel Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical 1.15 mW @ 10 V Inspection 30 V 241 A

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 3.4 mW

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N-Channel Logic Level, SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses 2.1 mW @ 10 V 30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A 2.8 mW @ 4.5

NVMFS4C01N Power MOSFET 30 V, 0.9 mW, 319 A, Single N-Channel, Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical 0.9 mW @ 10 V Inspection 30 V 319 A

NVMFS4C310N Power MOSFET 30 V, 51 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com NVMFS4C310NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.0 mW @