NVTFS4823N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVTFS4823N
Código: 4823
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 13 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia entre drenaje y fuente RDS(on): 0.0105 Ohm
Paquete / Cubierta: WDFN8
Búsqueda de reemplazo de MOSFET NVTFS4823N
NVTFS4823N Datasheet (PDF)
nvtfs4823n-d.pdf
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nvtfs4824n.pdf
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nvtfs4c25n.pdf
NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring
nvtfs4c06n.pdf
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nvtfs4c13n.pdf
NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1
nvtfs4c08n.pdf
NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1
nvtfs4c10n.pdf
NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1
nvtfs4c05n.pdf
NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @
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