NVTFS4823N datasheet, подбор замены

 0.1. Size:112K  onsemi
 nvtfs4823n-d.pdf 

NVTFS4823N Power MOSFET 30 V, 10.5 mW, 30 A, Single N-Channel Features Small Footprint (3.3x3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NV Prefix for Automotive and Other Applications Requiring 10.5 mW @ 10 V AEC-Q101 Qualified Site and Change Controls 30

 6.1. Size:123K  onsemi
 nvtfs4824n.pdf 

NVTFS4824N Power MOSFET 30 V, 4.7 mW, 46 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS4824NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.7 mW @ 10 V These Devices are Pb-F

 8.1. Size:82K  onsemi
 nvtfs4c25n.pdf 

NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product 17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

 8.2. Size:81K  onsemi
 nvtfs4c06n.pdf 

NVTFS4C06N Power MOSFET 30 V, 4.2 mW, 71 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 4.2 mW @ 1

 8.3. Size:80K  onsemi
 nvtfs4c13n.pdf 

NVTFS4C13N Power MOSFET 30 V, 9.4 mW, 40 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 9.4 mW @ 1

 8.4. Size:82K  onsemi
 nvtfs4c08n.pdf 

NVTFS4C08N Power MOSFET 30 V, 5.9 mW, 55 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 5.9 mW @ 1

 8.5. Size:78K  onsemi
 nvtfs4c10n.pdf 

NVTFS4C10N Power MOSFET 30 V, 7.4 mW, 47 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring 7.4 mW @ 1

 8.6. Size:75K  onsemi
 nvtfs4c05n.pdf 

NVTFS4C05N Power MOSFET 30 V, 3.6 mW, 102 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 3.6 mW @