NVTFS4823N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVTFS4823N
Маркировка: 4823
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 175 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0105 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NVTFS4823N
NVTFS4823N Datasheet (PDF)
nvtfs4823n-d.pdf
NVTFS4823NPower MOSFET30 V, 10.5 mW, 30 A, Single N-ChannelFeatures Small Footprint (3.3x3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NV Prefix for Automotive and Other Applications Requiring10.5 mW @ 10 VAEC-Q101 Qualified Site and Change Controls30
nvtfs4824n.pdf
NVTFS4824NPower MOSFET30 V, 4.7 mW, 46 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS4824NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable4.7 mW @ 10 V These Devices are Pb-F
nvtfs4c25n.pdf
NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring
nvtfs4c06n.pdf
NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1
nvtfs4c13n.pdf
NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1
nvtfs4c08n.pdf
NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1
nvtfs4c10n.pdf
NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1
nvtfs4c05n.pdf
NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @
Другие MOSFET... NVD5803N , NVD5862N , NVD5863NL , NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL , NVMFS4841N , 7N60 , NVTFS4824N , NVTFS5116PL , NVTFS5811NL , NVTFS5820NL , NVTFS5826NL , SCH1330 , SCH1331 , SCH1332 .
