2SK975 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK975

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO92M

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2SK975 datasheet

 ..1. Size:109K  renesas
r07ds0434ej 2sk975.pdf pdf_icon

2SK975

Preliminary Datasheet R07DS0434EJ0300 2SK975 (Previous REJ03G0905-0200) Rev.3.00 Silicon N Channel MOS FET Jun 07, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid

 ..2. Size:75K  renesas
2sk975.pdf pdf_icon

2SK975

2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

 9.1. Size:46K  1
2sk973l 2sk973s.pdf pdf_icon

2SK975

2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 12 Low on-resistance 3 2, 4 High speed switching S type L type Low drive current 4 V gate drive device Can be driven from 5 V source 1. Gate 1 Suitable for motor drive, DC-DC converter, 2. Drain 3. Source power switch and solenoid drive 4

 9.2. Size:44K  1
2sk972.pdf pdf_icon

2SK975

2SK972 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum R

Otros transistores... 2SK963, 2SK970, 2SK971, 2SK972, 2SK973L, 2SK973S, 2SK974L, 2SK974S, IRF730, 2SK979, 2SK981, 2SK981A, 2SK985, 2SK987, 2SK988, 2SK989, 2SK990