All MOSFET. 2SK975 Datasheet

 

2SK975 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK975
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO92M

 2SK975 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK975 Datasheet (PDF)

 ..1. Size:109K  renesas
r07ds0434ej 2sk975.pdf

2SK975
2SK975

Preliminary Datasheet R07DS0434EJ03002SK975 (Previous: REJ03G0905-0200)Rev.3.00Silicon N Channel MOS FET Jun 07, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid

 ..2. Size:75K  renesas
2sk975.pdf

2SK975
2SK975

2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous: ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

 9.1. Size:46K  1
2sk973l 2sk973s.pdf

2SK975
2SK975

2SK973 L , 2SK973 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4

 9.2. Size:44K  1
2sk972.pdf

2SK975
2SK975

2SK972Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum R

 9.3. Size:43K  1
2sk971.pdf

2SK975
2SK975

2SK971Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum Ra

 9.4. Size:46K  1
2sk974l 2sk974s.pdf

2SK975
2SK975

2SK974 L , 2SK974 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4

 9.5. Size:244K  1
2sk970.pdf

2SK975
2SK975

 9.6. Size:125K  no
2sk979.pdf

2SK975

www.DataSheet4U.com

 9.7. Size:286K  inchange semiconductor
2sk973s.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK973SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.8. Size:287K  inchange semiconductor
2sk972.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK972FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.9. Size:288K  inchange semiconductor
2sk971.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK971FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 9.10. Size:354K  inchange semiconductor
2sk973l.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK973LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.11. Size:205K  inchange semiconductor
2sk974l.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK974LFEATURESWith TO-251(IPAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

 9.12. Size:200K  inchange semiconductor
2sk974s.pdf

2SK975
2SK975

isc N-Channel MOSFET Transistor 2SK974SFEATURESWith TO-252 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

Datasheet: 2SK963 , 2SK970 , 2SK971 , 2SK972 , 2SK973L , 2SK973S , 2SK974L , 2SK974S , IRFB3206 , 2SK979 , 2SK981 , 2SK981A , 2SK985 , 2SK987 , 2SK988 , 2SK989 , 2SK990 .

 

 
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