FDMS3606S Todos los transistores

 

FDMS3606S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS3606S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 21 nC

Resistencia drenaje-fuente RDS(on): 0.0065 Ohm

Empaquetado / Estuche: PQFN5X6

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FDMS3606S Datasheet (PDF)

1.1. fdms3606s.pdf Size:543K _fairchild_semi

FDMS3606S
FDMS3606S

December 2012 FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5

2.1. fdms3606as.pdf Size:582K _fairchild_semi

FDMS3606S
FDMS3606S

April 2011 FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.1. fdms3600s.pdf Size:384K _fairchild_semi

FDMS3606S
FDMS3606S

October 2010 FDMS3600S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 m? N-Channel: 25 V, 40 A, 1.6 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous

3.2. fdms3604as.pdf Size:582K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.3. fdms3600as.pdf Size:565K _fairchild_semi

FDMS3606S
FDMS3606S

April 2011 FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

3.4. fdms3602as.pdf Size:557K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

 3.5. fdms3602s.pdf Size:585K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m? at VGS = 4.5 V, ID

3.6. fdms3604s.pdf Size:602K _fairchild_semi

FDMS3606S
FDMS3606S

January 2015 FDMS3604S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V

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