All MOSFET. FDMS3606S Datasheet

 

FDMS3606S MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS3606S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: PQFN5X6

FDMS3606S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS3606S Datasheet (PDF)

0.1. fdms3606s.pdf Size:543K _fairchild_semi

FDMS3606S
FDMS3606S

December 2012 FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5

6.1. fdms3606as.pdf Size:582K _fairchild_semi

FDMS3606S
FDMS3606S

April 2011 FDMS3606AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V,

 7.1. fdms3600s.pdf Size:384K _fairchild_semi

FDMS3606S
FDMS3606S

October 2010 FDMS3600S Dual N-Channel PowerTrench® MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchron

7.2. fdms3602as.pdf Size:557K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

 7.3. fdms3602s.pdf Size:585K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3602S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 mΩ at VGS = 4.5

7.4. fdms3604s.pdf Size:602K _fairchild_semi

FDMS3606S
FDMS3606S

January 2015 FDMS3604S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V

 7.5. fdms3604as.pdf Size:582K _fairchild_semi

FDMS3606S
FDMS3606S

March 2011 FDMS3604AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V,

7.6. fdms3600as.pdf Size:565K _fairchild_semi

FDMS3606S
FDMS3606S

April 2011 FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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