Аналог (замена) для FDMS3606S

 

 

FDMS3606S Datasheet (PDF)

1.1. fdms3606s.pdf Size:543K _fairchild_semi

December 2012 FDMS3606S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5

2.1. fdms3606as.pdf Size:582K _fairchild_semi

April 2011 FDMS3606AS PowerTrench� Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.1. fdms3600s.pdf Size:384K _fairchild_semi

October 2010 FDMS3600S Dual N-Channel PowerTrench� MOSFET N-Channel: 25 V, 30 A, 5.6 m? N-Channel: 25 V, 40 A, 1.6 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous

3.2. fdms3604as.pdf Size:582K _fairchild_semi

March 2011 FDMS3604AS PowerTrench� Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m? at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m? at VGS = 4.5 V, ID =

 3.3. fdms3600as.pdf Size:565K _fairchild_semi

April 2011 FDMS3600AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

3.4. fdms3602as.pdf Size:557K _fairchild_semi

March 2011 FDMS3602AS PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 mΩ at VGS = 4.5

 3.5. fdms3602s.pdf Size:585K _fairchild_semi

March 2011 FDMS3602S PowerTrench� Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m? at VGS = 10 V, ID = 15 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m? at VGS = 4.5 V, ID

3.6. fdms3604s.pdf Size:602K _fairchild_semi

January 2015 FDMS3604S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel dual PQFN package. The switch node has been internally Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 mΩ at VGS = 4.5 V

     

 

Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |