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FCP190N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCP190N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220

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FCP190N65F Datasheet (PDF)

 ..1. Size:998K  fairchild semi
fcp190n65f.pdf pdf_icon

FCP190N65F

August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)

 ..2. Size:484K  onsemi
fcp190n65f.pdf pdf_icon

FCP190N65F

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp190n65f.pdf pdf_icon

FCP190N65F

isc N-Channel MOSFET Transistor FCP190N65F FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 5.1. Size:373K  onsemi
fcp190n65s3.pdf pdf_icon

FCP190N65F

FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc

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