FCP190N65F Todos los transistores

 

FCP190N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCP190N65F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 208 W

Tensión drenaje-fuente |Vds|: 650 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 20.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 60 nC

Resistencia drenaje-fuente RDS(on): 0.19 Ohm

Empaquetado / Estuche: TO220

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FCP190N65F Datasheet (PDF)

..1. fcp190n65f.pdf Size:998K _fairchild_semi

FCP190N65F
FCP190N65F

August 2014FCP190N65FN-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)

..2. fcp190n65f.pdf Size:484K _onsemi

FCP190N65F
FCP190N65F

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. fcp190n65f.pdf Size:257K _inchange_semiconductor

FCP190N65F
FCP190N65F

isc N-Channel MOSFET Transistor FCP190N65FFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

5.1. fcp190n65s3.pdf Size:373K _onsemi

FCP190N65F
FCP190N65F

FCP190N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 17 Acharge performance. This advanc

5.2. fcp190n65s3r0.pdf Size:357K _onsemi

FCP190N65F
FCP190N65F

FCP190N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

 5.3. fcp190n65s3.pdf Size:207K _inchange_semiconductor

FCP190N65F
FCP190N65F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP190N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI

Otros transistores... FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , AO4468 , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 .

 

 
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