FCP190N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP190N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FCP190N65F MOSFET
FCP190N65F PDF Specs
fcp190n65f.pdf
August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC) ... See More ⇒
fcp190n65f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp190n65f.pdf
isc N-Channel MOSFET Transistor FCP190N65F FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
fcp190n65s3.pdf
FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc... See More ⇒
Otros transistores... FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , AO3407 , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP4688S | AP4606 | AP4580 | AP4435C | AP4410 | AP4409S | AP4407C | AP4407 | AP3N50K | AP3N50F | AP3912GD | AP3415E | AP3404S | AP3404 | AP3205 | AP3139
Popular searches
2sc733 | a933 transistor | d209l | irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet

