All MOSFET. FCP190N65F Datasheet

 

FCP190N65F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCP190N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220

 FCP190N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP190N65F Datasheet (PDF)

 ..1. Size:998K  fairchild semi
fcp190n65f.pdf

FCP190N65F FCP190N65F

August 2014FCP190N65FN-Channel SuperFET II FRFET MOSFET650 V, 20.6 A, 190 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)

 ..2. Size:484K  onsemi
fcp190n65f.pdf

FCP190N65F FCP190N65F

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp190n65f.pdf

FCP190N65F FCP190N65F

isc N-Channel MOSFET Transistor FCP190N65FFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 5.1. Size:373K  onsemi
fcp190n65s3.pdf

FCP190N65F FCP190N65F

FCP190N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 190 mW @ 10 V 17 Acharge performance. This advanc

 5.2. Size:357K  onsemi
fcp190n65s3r0.pdf

FCP190N65F FCP190N65F

FCP190N65S3R0MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 17 A, 190 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailor

 5.3. Size:207K  inchange semiconductor
fcp190n65s3.pdf

FCP190N65F FCP190N65F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP190N65S3FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXI

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STV55N05L

 

 
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