FCP190N65F. Аналоги и основные параметры
Наименование производителя: FCP190N65F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO220
Аналог (замена) для FCP190N65F
- подборⓘ MOSFET транзистора по параметрам
FCP190N65F даташит
fcp190n65f.pdf
August 2014 FCP190N65F N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 168 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 60 nC)
fcp190n65f.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp190n65f.pdf
isc N-Channel MOSFET Transistor FCP190N65F FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
fcp190n65s3.pdf
FCP190N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 190 mW @ 10 V 17 A charge performance. This advanc
Другие MOSFET... FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , AO3407 , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 .
History: AOD4124 | H04N65E | RCJ050N25
History: AOD4124 | H04N65E | RCJ050N25
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