FDB86360F085 Todos los transistores

 

FDB86360F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB86360F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: TO263 D2PAK
     - Selección de transistores por parámetros

 

FDB86360F085 Datasheet (PDF)

 6.1. Size:365K  fairchild semi
fdb86360 f085.pdf pdf_icon

FDB86360F085

January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c

 6.2. Size:615K  onsemi
fdb86360-f085.pdf pdf_icon

FDB86360F085

FDB86360-F085N-Channel Power Trench MOSFET80V, 110A, 1.8mFeatures Typ rDS(on) = 1.5m at VGS = 10V, ID = 80AG Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar

 7.1. Size:465K  fairchild semi
fdb86366 f085.pdf pdf_icon

FDB86360F085

December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In

 7.2. Size:486K  fairchild semi
fdb86363 f085.pdf pdf_icon

FDB86360F085

June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPB60R190C6 | FCH20N60 | VBZE50P03

 

 
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