FDB86360F085 - описание и поиск аналогов

 

FDB86360F085. Аналоги и основные параметры

Наименование производителя: FDB86360F085

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 333 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm

Тип корпуса: TO263 D2PAK

Аналог (замена) для FDB86360F085

- подборⓘ MOSFET транзистора по параметрам

 

FDB86360F085 даташит

 6.1. Size:365K  fairchild semi
fdb86360 f085.pdfpdf_icon

FDB86360F085

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c

 6.2. Size:615K  onsemi
fdb86360-f085.pdfpdf_icon

FDB86360F085

FDB86360-F085 N-Channel Power Trench MOSFET 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar

 7.1. Size:465K  fairchild semi
fdb86366 f085.pdfpdf_icon

FDB86360F085

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In

 7.2. Size:486K  fairchild semi
fdb86363 f085.pdfpdf_icon

FDB86360F085

June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co

Другие MOSFET... FDMS0310S , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , FCP190N65F , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , IRF2807 , IXFA102N15T , IXFA10N60P , IXFA10N80P , IXFA110N15T2 , IXFA12N50P , IXFA130N10T , IXFA130N10T2 , IXFA14N60P .

History: IXFA10N60P | IXFB40N110P | NTLGD3502N | TPCS8209

 

 

 

 

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