FDB86360F085 PDF and Equivalents Search

 

FDB86360F085 Specs and Replacement

Type Designator: FDB86360F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO263 D2PAK

FDB86360F085 substitution

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FDB86360F085 datasheet

 6.1. Size:365K  fairchild semi
fdb86360 f085.pdf pdf_icon

FDB86360F085

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c... See More ⇒

 6.2. Size:615K  onsemi
fdb86360-f085.pdf pdf_icon

FDB86360F085

FDB86360-F085 N-Channel Power Trench MOSFET 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primar... See More ⇒

 7.1. Size:465K  fairchild semi
fdb86366 f085.pdf pdf_icon

FDB86360F085

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In... See More ⇒

 7.2. Size:486K  fairchild semi
fdb86363 f085.pdf pdf_icon

FDB86360F085

June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co... See More ⇒

Detailed specifications: FDMS0310S, GWM160-0055X1-SL, FDMS0302S, GWM160-0055X1-SMD, FCP190N65F, GWM180-004X2-SL, FCH043N60, GWM180-004X2-SMD, IRF2807, IXFA102N15T, IXFA10N60P, IXFA10N80P, IXFA110N15T2, IXFA12N50P, IXFA130N10T, IXFA130N10T2, IXFA14N60P

Keywords - FDB86360F085 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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