IXFH100N25P Todos los transistores

 

IXFH100N25P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH100N25P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 600 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 185 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.027 Ohm

Empaquetado / Estuche: TO247

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IXFH100N25P Datasheet (PDF)

1.1. ixfh100n25p.pdf Size:95K _ixys

IXFH100N25P
IXFH100N25P

IXFH 100N25P VDSS = 250 V PolarHTTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 27 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 200 ns ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C; RGS = 1 M? 250 V VGS Continuous 20 V G VGSM Transient 30 V D (TAB) S ID25

4.1. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFH100N25P
IXFH100N25P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

4.2. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

IXFH100N25P
IXFH100N25P

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

 4.3. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

IXFH100N25P
IXFH100N25P

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB)

4.4. ixfh10n100q.pdf Size:568K _ixys

IXFH100N25P
IXFH100N25P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFM 10 N100 1000 V 10 A 1.20 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFM 12 N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode ≤ ≤ 250 ns ≤ ≤ High dv/dt, Low trr, HDMOSTM Family trr ≤ Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M

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