All MOSFET. IXFH100N25P Datasheet

 

IXFH100N25P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFH100N25P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO247

 IXFH100N25P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFH100N25P Datasheet (PDF)

 ..1. Size:95K  ixys
 ixfh100n25p.pdf

IXFH100N25P IXFH100N25P

IXFH 100N25P VDSS = 250 VPolarHTTM HiPerFETID25 = 100 APower MOSFET RDS(on) 27 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic DiodeAvalanche RatedTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 M 250 VVGS Continuous 20 VGVGSM

 8.1. Size:570K  ixys
 ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf

IXFH100N25P IXFH100N25P

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 8.2. Size:568K  ixys
 ixfh10n100q.pdf

IXFH100N25P IXFH100N25P

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

 8.3. Size:179K  ixys
 ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

IXFH100N25P IXFH100N25P

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

 8.4. Size:144K  ixys
 ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

IXFH100N25P IXFH100N25P

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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