IXFH110N15T2 Todos los transistores

 

IXFH110N15T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH110N15T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 480 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 150 nC

Tiempo de elevación (tr): 85 nS

Resistencia drenaje-fuente RDS(on): 0.013 Ohm

Empaquetado / Estuche: TO247

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IXFH110N15T2 Datasheet (PDF)

1.1. ixfh110n10p ixfv110n10p.pdf Size:309K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET ? ? IXFV 110N10PS RDS(on) ? 15 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 150 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGSS Continuous 20 V G VGSM Tran

4.1. ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf Size:95K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 11 N80 800 V 11 A 0.95 W Power MOSFETs IXFH/IXFM 13 N80 800 V 13 A 0.80 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25C 11N80

 5.1. ixfh18n100q3 ixft18n100q3.pdf Size:130K _ixys

IXFH110N15T2
IXFH110N15T2

Advance Technical Information HiperFETTM VDSS = 1000V IXFT18N100Q3 Power MOSFETs ID25 = 18A IXFH18N100Q3 ≤ Ω Q3-Class RDS(on) ≤ Ω ≤ 660mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V TO-247 (IXFH) VDGR TJ = 25°C to 150°C, RGS = 1M

5.2. ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf Size:166K _ixys

IXFH110N15T2
IXFH110N15T2

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 440mΩ ≤ Ω ≤ Ω IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

 5.3. ixfh140n10p ixft140n10p.pdf Size:177K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs ? ? RDS(on) ? 11 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode trr ? 150 ns ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D (

5.4. ixfh18n60p ixfv18n60p.pdf Size:172K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET ? ? IXFV 18N60PS RDS(on) ? 400 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGS Continuous 30 V VGSM Tranisent 4

 5.5. ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf Size:179K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N90 900 V 10 A 1.1 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N90 900 V 12 A 0.9 ? ? ? ? ? IXFH/IXFT 13 N90 900 V 13 A 0.8 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 900 V VDGR TJ = 25C to 150C; RGS = 1

5.6. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys

IXFH110N15T2
IXFH110N15T2

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

5.7. ixfh13n50 ixfm13n50.pdf Size:82K _ixys

IXFH110N15T2
IXFH110N15T2

HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr ? 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C13 A TO-204 AA (IXFM) IDM

5.8. ixfh12n90p ixfv12n90p-s.pdf Size:179K _ixys

IXFH110N15T2
IXFH110N15T2

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM ? ? RDS(on) ? ? ? 900m? ? ? IXFV12N90PS ? ? ? trr ? ? 300ns ? ? N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25C to 150C 900 V D (TAB) VDGR TJ = 25C to 150C, RGS = 1M? 900

5.9. ixfh150n20t ixft150n20t.pdf Size:180K _ixys

IXFH110N15T2
IXFH110N15T2

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T ≤ Ω RDS(on) ≤ Ω ≤ 15mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V TO-247 (IX

5.10. ixfh150n15p ixfk150n15p.pdf Size:252K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A ? ? RDS(on)? 13 m? ? ? ? ? N-Channel Enhancement Mode ? ? Fast Intrinsic Diode ? trr ? 200 ns ? ? ? Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VGS Continuous 20 V VGSM Transient 30 V G D

5.11. ixfh120n25t ixft120n25t.pdf Size:180K _ixys

IXFH110N15T2
IXFH110N15T2

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T ≤ Ω RDS(on) ≤ Ω ≤ 23mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V TO-247

5.12. ixfh13n80q ixft13n80q.pdf Size:50K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 13N80Q VDSS = 800 V HiPerFETTM IXFT 13N80Q ID25 = 13 A Power MOSFETs RDS(on) = 0.70 W Q Class N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V G VGS Continuous ±20 V (TAB) S VGSM

5.13. ixfh120n15p ixft120n15p.pdf Size:177K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? N-Channel Enhancement Mode ? Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V D (TAB) VGSM Transi

5.14. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

5.15. ixfh16n90 ixfx16n90.pdf Size:112K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t £ 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 2

5.16. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

5.17. ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Size:116K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V (TAB) VGS Continuous 20 V VGS

5.18. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

5.19. ixfh15n80q ixft15n80q.pdf Size:111K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25C15 A IDM TC = 25C,

5.20. ixfh14n80 ixfh15n80.pdf Size:112K _ixys

IXFH110N15T2
IXFH110N15T2

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode ? ? ? ? IXFH14N80 800 V 14 A 0.70 ? High dv/dt, Low trr, HDMOSTM Family ? ? ? ? IXFH15N80 800 V 15 A 0.60 ? ? trr ? ? 250 ns ? ? Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25

5.21. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFH110N15T2
IXFH110N15T2

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V S (TAB) VGS Continuous 30 V VGSM Tranisent 40 V TO-247 (I

5.22. ixfh10n100q.pdf Size:568K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFM 10 N100 1000 V 10 A 1.20 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFM 12 N100 1000 V 12 A 1.05 Ω Ω Ω Ω N-Channel Enhancement Mode ≤ ≤ 250 ns ≤ ≤ High dv/dt, Low trr, HDMOSTM Family trr ≤ Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M

5.23. ixfh100n25p.pdf Size:95K _ixys

IXFH110N15T2
IXFH110N15T2

IXFH 100N25P VDSS = 250 V PolarHTTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 27 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? ? trr ? 200 ns ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C; RGS = 1 M? 250 V VGS Continuous 20 V G VGSM Transient 30 V D (TAB) S ID25

5.24. ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf Size:570K _ixys

IXFH110N15T2
IXFH110N15T2

VDSS ID25 RDS(on) HiPerFETTM ? IXFH/IXFM 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFH/IXFM 12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode ? ? 250 ns ? ? High dv/dt, Low trr, HDMOSTM Family trr ? Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 20 V (TAB)

5.25. ixfa16n50p ixfh16n50p ixfp16n50p.pdf Size:252K _ixys

IXFH110N15T2
IXFH110N15T2

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) ? 400 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGS Continuous 30 V VGSM Transient 4

5.26. ixfa18n60x ixfh18n60x ixfp18n60x.pdf Size:183K _ixys

IXFH110N15T2
IXFH110N15T2

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X   RDS(on)    230m     IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to

5.27. ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf Size:173K _ixys

IXFH110N15T2
IXFH110N15T2

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 ≤ Ω RDS(on) ≤ Ω ≤ 360mΩ ≤ Ω ≤ Ω IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 15

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