All MOSFET. IXFH110N15T2 Datasheet

 

IXFH110N15T2 Datasheet and Replacement


   Type Designator: IXFH110N15T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 85 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO247
 

 IXFH110N15T2 substitution

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IXFH110N15T2 Datasheet (PDF)

 5.1. Size:309K  ixys
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IXFH110N15T2

IXFH 110N10P VDSS = 100 VPolarHTTM HiPerFETIXFV 110N10P ID25 = 110 APower MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100

 8.1. Size:426K  1
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IXFH110N15T2

 8.2. Size:95K  ixys
 ixfh11n80 ixfh13n80 ixfm11n80 ixfm13n80.pdf pdf_icon

IXFH110N15T2

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 11 N80 800 V 11 A 0.95 WPower MOSFETsIXFH/IXFM 13 N80 800 V 13 A 0.80 Wtrr 250 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 MW 800 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 2

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Datasheet: IXFF24N100 , IXFF80N50Q2 , IXFG55N50 , IXFH100N25P , IXFH102N15T , IXFH10N100P , IXFH10N80P , IXFH110N10P , STF13NM60N , IXFH110N25T , IXFH120N15P , IXFH120N20P , IXFH12N100F , IXFH12N100P , IXFH12N120 , IXFH12N120P , IXFH12N50F .

History: AP4407GP | PMDXB600UNE | TSM4N60CP | QM4014D | SHD220301 | SI8808DB | DMG4932LSD

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