IXFH16N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFH16N80P Datasheet (PDF)

7.1. Size:252K ixys
ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFA 16N50P VDSS = 500 VPolarHVTM HiPerFETIXFH 16N50P ID25 = 16 APower MOSFETIXFP 16N50P RDS(on) 400 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

7.2. Size:112K ixys
ixfh16n90 ixfx16n90.pdf pdf_icon

IXFH16N90 VDSS = 900 VHiPerFETTMIXFX16N90 ID25 = 16 APower MOSFETsRDS(on) = 0.65 WN-Channel Enhancement Modet 200 nsHigh dv/dt, Low t , HDMOSTM FamilyrrrrPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD(IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 M 900 V(TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 2

7.3. Size:166K ixys
ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA16N60P3Power MOSFETs ID25 = 16AIXFP16N60P3 RDS(on) 440m IXFH16N60P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-220AB (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 15

7.4. Size:173K ixys
ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFA16N50P3Power MOSFETs ID25 = 16AIXFP16N50P3 RDS(on) 360m IXFH16N50P3N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 15

Otros transistores... IXFH15N100P , IXFH15N100Q , IXFH15N100Q3 , IXFH15N80Q , IXFH160N15T , IXFH160N15T2 , IXFH16N120P , IXFH16N50P , 8N60 , IXFH16N90Q , IXFH170N10P , IXFH17N80Q , IXFH18N60P , IXFH18N90P , IXFH20N100P , IXFH20N80P , IXFH21N50F .