IXFH16N80P PDF and Equivalents Search

 

IXFH16N80P Specs and Replacement

Type Designator: IXFH16N80P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 460 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO247

IXFH16N80P substitution

- MOSFET ⓘ Cross-Reference Search

 

IXFH16N80P datasheet

 7.1. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFH16N80P

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V ... See More ⇒

 7.2. Size:112K  ixys
 ixfh16n90 ixfx16n90.pdf pdf_icon

IXFH16N80P

IXFH16N90 VDSS = 900 V HiPerFETTM IXFX16N90 ID25 = 16 A Power MOSFETs RDS(on) = 0.65 W N-Channel Enhancement Mode t 200 ns High dv/dt, Low t , HDMOSTM Family rr rr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2... See More ⇒

 7.3. Size:166K  ixys
 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFH16N80P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15... See More ⇒

 7.4. Size:173K  ixys
 ixfa16n50p3 ixfh16n50p3 ixfp16n50p3.pdf pdf_icon

IXFH16N80P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFA16N50P3 Power MOSFETs ID25 = 16A IXFP16N50P3 RDS(on) 360m IXFH16N50P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 15... See More ⇒

SHOW MORE

Detailed specifications: IXFH15N100P, IXFH15N100Q, IXFH15N100Q3, IXFH15N80Q, IXFH160N15T, IXFH160N15T2, IXFH16N120P, IXFH16N50P, IRFB7545, IXFH16N90Q, IXFH170N10P, IXFH17N80Q, IXFH18N60P, IXFH18N90P, IXFH20N100P, IXFH20N80P, IXFH21N50F

Keywords - IXFH16N80P MOSFET specs

 IXFH16N80P cross reference

 IXFH16N80P equivalent finder

 IXFH16N80P pdf lookup

 IXFH16N80P substitution

 IXFH16N80P replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.