IXFH22N50P Todos los transistores

 

IXFH22N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH22N50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 350 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 22 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 50 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO247

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IXFH22N50P Datasheet (PDF)

1.1. ixfh22n50p ixfv22n50p.pdf Size:312K _ixys

IXFH22N50P
IXFH22N50P

IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) ? 270 m? ? ? ? ? ? ? ? ? ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V D (TAB) VGS Continuous 30 V VGSM

2.1. ixfh22n55.pdf Size:69K _ixys

IXFH22N50P
IXFH22N50P

HiPerFETTM IXFH 22 N55 VDSS = 550 V Power MOSFET ID (cont) = 22 A RDS(on) = 0.27 W N-Channel Enhancement Mode trr ? 250 ns Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 550 V VDGR TJ = 25C to 150C; RGS = 1 MW 550 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C22 A IDM TC = 25C, pulse

 3.1. ixfh22n60p ixfv22n60p.pdf Size:295K _ixys

IXFH22N50P
IXFH22N50P

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS ? ? RDS(on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V G D (TAB) VGS Continuous 30 V

3.2. ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf Size:168K _ixys

IXFH22N50P
IXFH22N50P

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2   RDS(on)    160m     IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to

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