IXFH22N50P PDF and Equivalents Search

 

IXFH22N50P Specs and Replacement

Type Designator: IXFH22N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 350 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO247

IXFH22N50P substitution

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IXFH22N50P datasheet

 ..1. Size:312K  ixys
 ixfh22n50p ixfv22n50p.pdf pdf_icon

IXFH22N50P

IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) 270 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

 6.1. Size:69K  ixys
 ixfh22n55.pdf pdf_icon

IXFH22N50P

HiPerFETTM IXFH 22 N55 VDSS = 550 V Power MOSFET ID (cont) = 22 A RDS(on) = 0.27 W N-Channel Enhancement Mode trr 250 ns Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 550 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C22 A IDM TC = ... See More ⇒

 7.1. Size:295K  ixys
 ixfh22n60p ixfv22n60p.pdf pdf_icon

IXFH22N50P

IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 60... See More ⇒

 7.2. Size:336K  ixys
 ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf pdf_icon

IXFH22N50P

X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T... See More ⇒

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Detailed specifications: IXFH170N10P, IXFH17N80Q, IXFH18N60P, IXFH18N90P, IXFH20N100P, IXFH20N80P, IXFH21N50F, IXFH21N50Q, AO4468, IXFH22N60P, IXFH22N60P3, IXFH230N075T2, IXFH230N10T, IXFH23N60Q, IXFH23N80Q, IXFH24N50Q, IXFH24N80P

Keywords - IXFH22N50P MOSFET specs

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