3N170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3N170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 10 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: TO72

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3N170 Datasheet (PDF)

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3n169 3n170 3n171.pdf

0.1. Size:456K st
stfw3n170 stw3n170.pdf

STFW3N170, STW3N170N-channel 1700 V, 8 typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDSTFW3N1701111700 V 12 2.3 ASTW3N170332 21 1 Intrinsic capacitances and Qg minimizedTO-247TO-3PF TO-3PF for higher creepage between leads High speed switching 10

0.2. Size:696K st
stfw3n170.pdf

STFW3N170 N-channel 1700 V, 7 typ., 2.6 A PowerMESH Power MOSFET in a TO-3PF package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFW3N170 1700 V 13 2.6 A 63 W Intrinsic capacitances and Q minimized g TO-3PF for higher creepage between leads High speed switching 32 100% avalanche tested 1Applications TO-3PF

0.3. Size:625K ncepower
nce3n170f.pdf

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.4. Size:635K ncepower
nce3n170d.pdf

NCE3N170DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.5. Size:643K ncepower
nce3n170t.pdf

NCE3N170TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

0.6. Size:664K ncepower
nce3n170pf.pdf

NCE3N170PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

0.7. Size:654K ncepower
nce3n170.pdf

NCE3N170N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

Otros transistores... 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 3N163 , 3N164 , 3N169 , K4145 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , 3N200 .

Liste

Recientemente añadidas las descripciónes de los transistores: