All MOSFET. 3N170 Datasheet

 

3N170 Datasheet and Replacement


   Type Designator: 3N170
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: TO72
 

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3N170 Datasheet (PDF)

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 3n169 3n170 3n171.pdf pdf_icon

3N170

 0.1. Size:456K  st
 stfw3n170 stw3n170.pdf pdf_icon

3N170

STFW3N170, STW3N170N-channel 1700 V, 8 typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDSTFW3N1701111700 V 12 2.3 ASTW3N170332 21 1 Intrinsic capacitances and Qg minimizedTO-247TO-3PF TO-3PF for higher creepage between leads High speed switching 10

 0.2. Size:696K  st
 stfw3n170.pdf pdf_icon

3N170

STFW3N170 N-channel 1700 V, 7 typ., 2.6 A PowerMESH Power MOSFET in a TO-3PF package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFW3N170 1700 V 13 2.6 A 63 W Intrinsic capacitances and Q minimized g TO-3PF for higher creepage between leads High speed switching 32 100% avalanche tested 1Applications TO-3PF

 0.3. Size:625K  ncepower
 nce3n170f.pdf pdf_icon

3N170

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

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Datasheet: 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 3N163 , 3N164 , 3N169 , STP75NF75 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , 3N200 .

Keywords - 3N170 MOSFET datasheet

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