Справочник MOSFET. 3N170

 

3N170 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 3N170
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 35 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 200 Ohm
   Тип корпуса: TO72

 Аналог (замена) для 3N170

 

 

3N170 Datasheet (PDF)

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 3n169 3n170 3n171.pdf

3N170 3N170

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 stfw3n170 stw3n170.pdf

3N170 3N170

STFW3N170, STW3N170N-channel 1700 V, 8 typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packagesDatasheet - preliminary dataFeaturesRDS(on) Order codes VDSS max IDSTFW3N1701111700 V 12 2.3 ASTW3N170332 21 1 Intrinsic capacitances and Qg minimizedTO-247TO-3PF TO-3PF for higher creepage between leads High speed switching 10

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 stfw3n170.pdf

3N170 3N170

STFW3N170 N-channel 1700 V, 7 typ., 2.6 A PowerMESH Power MOSFET in a TO-3PF package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTFW3N170 1700 V 13 2.6 A 63 W Intrinsic capacitances and Q minimized g TO-3PF for higher creepage between leads High speed switching 32 100% avalanche tested 1Applications TO-3PF

 0.3. Size:625K  ncepower
 nce3n170f.pdf

3N170 3N170

NCE3N170FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.4. Size:635K  ncepower
 nce3n170d.pdf

3N170 3N170

NCE3N170DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.5. Size:643K  ncepower
 nce3n170t.pdf

3N170 3N170

NCE3N170TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 0.6. Size:664K  ncepower
 nce3n170pf.pdf

3N170 3N170

NCE3N170PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

 0.7. Size:654K  ncepower
 nce3n170.pdf

3N170 3N170

NCE3N170N-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1850 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 6 DS(ON)TYPSwitched applications.ID 2.9 AQg 33 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

Другие MOSFET... 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 3N163 , 3N164 , 3N169 , K4145 , 3N171 , 3N175 , 3N176 , 3N177 , 3N187 , 3N190 , 3N191 , 3N200 .

 

 
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