3N170 - описание и поиск аналогов

 ..1. Size:103K  1
 3n169 3n170 3n171.pdf 

 0.1. Size:456K  st
 stfw3n170 stw3n170.pdf 

STFW3N170, STW3N170 N-channel 1700 V, 8 typ., 2.3 A, PowerMESH Power MOSFET in TO-3FP and TO-247 packages Datasheet - preliminary data Features RDS(on) Order codes VDSS max ID STFW3N170 1 1 1 1700 V 12 2.3 A STW3N170 3 3 2 2 1 1 Intrinsic capacitances and Qg minimized TO-247 TO-3PF TO-3PF for higher creepage between leads High speed switching 10

 0.2. Size:696K  st
 stfw3n170.pdf 

STFW3N170 N-channel 1700 V, 7 typ., 2.6 A PowerMESH Power MOSFET in a TO-3PF package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STFW3N170 1700 V 13 2.6 A 63 W Intrinsic capacitances and Q minimized g TO-3PF for higher creepage between leads High speed switching 3 2 100% avalanche tested 1 Applications TO-3PF

 0.3. Size:625K  ncepower
 nce3n170f.pdf 

NCE3N170F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.4. Size:635K  ncepower
 nce3n170d.pdf 

NCE3N170D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.5. Size:643K  ncepower
 nce3n170t.pdf 

NCE3N170T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications

 0.6. Size:664K  ncepower
 nce3n170pf.pdf 

NCE3N170PF N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched application

 0.7. Size:654K  ncepower
 nce3n170.pdf 

NCE3N170 N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1850 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 6 DS(ON)TYP Switched applications. ID 2.9 A Qg 33 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications