IXFN420N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical Information GigaMOSTM Trench VDSS = 100V IXFN420N10T HiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFET trr 140ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C

IXFN 48N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 40 A Power MOSFET RDS(on) 140 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V E153432 S VGSS Cont

HiPerFETTM IXFN 44N60 VDSS = 600 V Power MOSFETs ID25 = 44 A Single Die MOSFET RDS(on) = 130 mW D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 600 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V G VGS Continuous 20 V VGSM Transient 30 V S I

VDSS ID25 RDS(on) HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETs IXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 500 500 V VDGR TJ = 25 C

VDSS ID (cont) RDS(on) trr HiPerFETTM 500 V 44 A 0.12 W 35 ns IXFN44N50U2 IXFN44N50U3 Power MOSFETs IXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns 3 3 Buck & Boost Configurations for PFC & Motor Control Circuits 4 2 2 Preliminary data 4 1 1 miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings 1 VDSS TJ = 25 C to 150 C 500 V 2 VDGR TJ = 25 C to 150 C; RGS = 1 MW 5

Preliminary Technical Information PolarTM Power MOSFET VDSS = 900V IXFN40N90P ID25 = 33A HiPerFETTM RDS(on) 210m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C, RGS = 1

Advance Technical Information HiperFETTM VDSS = 1100V IXFN40N110Q3 Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C, RGS = 1M 1100 V S VGSS Continuous 30 V D V

IXFN 44N80 VDSS = 800 V HiPerFETTM ID25 = 44 A Power MOSFETs RDS(on) = 0.165 Single MOSFET Die D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 800 V E153432 S VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V G VGS Continuous 20 V VGSM Tran