Справочник MOSFET. IXFN420N10T

 

IXFN420N10T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXFN420N10T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1070 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 420 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 670 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: TO227

 Аналог (замена) для IXFN420N10T

 

 

IXFN420N10T Datasheet (PDF)

 ..1. Size:179K  ixys
 ixfn420n10t.pdf

IXFN420N10T IXFN420N10T

Advance Technical InformationGigaMOSTM Trench VDSS = 100VIXFN420N10THiperFETTM ID25 = 420A RDS(on) 2.3m Power MOSFETtrr 140nsN-Channel Enhancement ModeAvalanche RatedminiBLOC, SOT-227E153432Fast Intrinsic DiodeSGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175

 9.1. Size:162K  ixys
 ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf

IXFN420N10T IXFN420N10T

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 9.2. Size:84K  ixys
 ixfn48n60p.pdf

IXFN420N10T IXFN420N10T

IXFN 48N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 40 APower MOSFET RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VminiBLOC, SOT-227 B (IXFN)VDGR TJ = 25C to 150C; RGS = 1 M 600 VE153432SVGSS Cont

 9.3. Size:128K  ixys
 ixfn44n60.pdf

IXFN420N10T IXFN420N10T

HiPerFETTMIXFN 44N60 VDSS = 600 VPower MOSFETsID25 = 44 ASingle Die MOSFET RDS(on) = 130 mWDtrr 250 nsN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 600 VSVDGR TJ = 25C to 150C; RGS = 1 MW 600 VGVGS Continuous 20 VVGSM Transient 30 VSI

 9.4. Size:108K  ixys
 ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf

IXFN420N10T IXFN420N10T

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

 9.5. Size:151K  ixys
 ixfn44n50u2-u3 ixfn48n50u2-u3.pdf

IXFN420N10T IXFN420N10T

VDSS ID (cont) RDS(on) trrHiPerFETTM500 V 44 A 0.12 W 35 nsIXFN44N50U2 IXFN44N50U3Power MOSFETsIXFN48N50U2 IXFN48N50U3 500 V 48 A 0.10 W 35 ns3 3Buck & Boost Configurations forPFC & Motor Control Circuits422Preliminary data411miniBLOC, SOT-227 BSymbol Test Conditions Maximum Ratings1VDSS TJ = 25C to 150C 500 V2VDGR TJ = 25C to 150C; RGS = 1 MW 5

 9.6. Size:113K  ixys
 ixfn40n90p.pdf

IXFN420N10T IXFN420N10T

Preliminary Technical InformationPolarTM Power MOSFET VDSS = 900VIXFN40N90PID25 = 33AHiPerFETTM RDS(on) 210m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227E153432VDSS TJ = 25C to 150C 900 VSVDGR TJ = 25C to 150C, RGS = 1

 9.7. Size:120K  ixys
 ixfn40n110q3.pdf

IXFN420N10T IXFN420N10T

Advance Technical InformationHiperFETTM VDSS = 1100VIXFN40N110Q3Power MOSFET ID25 = 35A Q3-Class RDS(on) 260m N-Channel Enhancement ModeFast Intrinsic RectifierminiBLOCE153432SSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C, RGS = 1M 1100 VSVGSS Continuous 30 VDV

 9.8. Size:138K  ixys
 ixfn44n80.pdf

IXFN420N10T IXFN420N10T

IXFN 44N80 VDSS = 800 VHiPerFETTMID25 = 44 APower MOSFETsRDS(on) = 0.165 Single MOSFET DieDN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 800 V E153432SVDGR TJ = 25C to 150C; RGS = 1 M 800 VGVGS Continuous 20 VVGSM Tran

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